Title :
Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?
Author :
Ernst, T. ; Duraffourg, L. ; Dupré, C. ; Bernard, E. ; Andreucci, P. ; Bécu, S. ; Ollier, E. ; Hubert, A. ; Halté, C. ; Buckley, J. ; Thomas, O. ; Delapierre, G. ; Deleonibus, S. ; De Salvo, B. ; Robert, P. ; Faynot, O.
Author_Institution :
CEA/LETI, Minatec, Grenoble
Abstract :
Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; nanoelectromechanical devices; nanowires; silicon-on-insulator; 2D thin film; 3D CMOS nanowire matrices; 3D stacked gate-all-around nanowire channels; MOSFET scaling; SON; Si-based nanowire devices; VLSI; nano-electro-mechanical-systems; silicon-on-insulator; CMOS technology; Costs; Crystallization; Etching; Germanium silicon alloys; MOSFETs; Nanoscale devices; Silicon germanium; Silicon on insulator technology; Thin film devices;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796804
