Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature

Author

Jeong, YeonJoo ; Chen, Jiezhi ; Saraya, Takuya ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, uniaxial stress effects on silicon nanowire pMOSFET (NW pFET) and single-hole transistor (SHT) are described. For the first time, it is found that stress technology is still effective as mobility booster even at extremely narrow NW pFET but the effects are gradually diminished as NW becomes narrower because effective mass modulation decreases. In case of SHT, oscillation current modulation, attributed to altered tunneling probability and energy level spacing by strain, is observed for the first time. In drift region of the SHT, strain effect of SHT approaches to the NW pFET case.

Keywords

MOSFET; carrier mobility; energy states; nanowires; silicon; tunnelling; NW pFET; SHT strain effect; Si; energy level; mass modulation; mobility booster; oscillation current modulation; silicon nanowire pMOSFET; single-hole transistor; temperature 293 K to 298 K; tunneling probability; uniaxial stress effect; Capacitive sensors; Compressive stress; Effective mass; Fabrication; MOSFET circuits; Silicon; Temperature; Tensile strain; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796808

Filename

4796808