Title :
Random Telegraph Noise in n-type and p-type silicon nanowire transistors
Author :
Yang, Seungwon ; Yeo, Kyoung Hwan ; Kim, Dong-Won ; Seo, Kang-ill ; Park, Donggun ; Jin, Gyoyoung ; Oh, Kyungseok ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul
Abstract :
We studied random telegraph noise (RTN) of n-type and p-type silicon nanowire transistors (SNWT) for the first time and derived accurate vertical and lateral trap location equations in nanowire structure. Using the derived equations, accurate trap locations were extracted in the devices with single trap as well as multiple traps.
Keywords :
MOSFET; elemental semiconductors; nanowires; semiconductor device noise; silicon; Si; lateral trap location equations; n-type silicon nanowire transistors; p-type silicon nanowire transistors; random telegraph noise; single trap; Silicon; Telegraphy;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796809
