Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

Author

Zhao, H. ; Rustagi, S.C. ; Singh, N. ; Ma, F.-J. ; Samudra, G.S. ; Budhaaraju, K.D. ; Manhas, S.K. ; Tung, C.H. ; Lo, G.Q. ; Baccarani, G. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci. Technol. & Res.), Singapore

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same single finger SNW device. To our knowledge, this is the first work to report systematic extraction of the mobility of channel carrier from a single channel SNW device at room temperature.

Keywords

capacitance measurement; carrier mobility; elemental semiconductors; field effect transistors; nanowires; semiconductor device measurement; semiconductor quantum wires; silicon; Si; capacitance-voltage characteristics; carrier mobility; carrier transport; channel gate; charge-based capacitance measurement; nanowire transistors; single channel silicon nanowire; temperature 293 K to 298 K; Capacitance measurement; Capacitance-voltage characteristics; Circuit testing; Current measurement; Fingers; Parasitic capacitance; Silicon; Temperature; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796810

Filename

4796810