Session 32: Characterization, reliability, and yield - defect characterization and dielectric breakdown

The session starts with a novel characterization technique called trap spectroscopy by charge injection and sensing (TSCIS). The technique allows one to characterize the trap density profile and trap energy level in dielectric materials. In the second paper the chemical nature of the percolation path is studied experimentally using high resolution electron energy loss spectroscopy (EELS). The next paper provides a link between the interface layers and bulk defects using kinetic MC simulations/analytical models and analyzes the impact on the breakdown statistics. In the fourth paper a new gate current random telegraph noise (RTN) measurement method will be presented in an attempt to identify the location of traps generated in high-k and interfacial layers. In the final paper the impact of interfacial layer on the metal/high-k gate stack breakdown is studied