Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

Author

Degraeve, R. ; Cho, M. ; Govoreanu, B. ; Kaczer, B. ; Zahid, M.B. ; Van Houdt, J. ; Jurczak, M. ; Groeseneken, G.

Author_Institution

IMEC, Leuven

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Trap spectroscopy by charge injection and sensing (TSCIS) is a new, fast and powerful material analysis technique that provides detailed information on the trap density profile and trap energy level in dielectric materials. We show the measurement principle and explain the data analysis. The technique is applied to a number of example materials: SiO₂, Al₂O₃, and Si₃N₄. We show that TSCIS has excellent resolution and is capable of distinguishing between different process-variations.

Keywords

VLSI; aluminium compounds; dielectric materials; semiconductor materials; silicon compounds; spectra; charge injection and sensing; dielectric stacks; material analysis technique; process-variations; quantitative electrical technique; trap density profile; trap energy level; trap spectroscopy; Aluminum oxide; Charge measurement; Current measurement; Dielectric materials; Dielectric measurements; Electrochemical impedance spectroscopy; Energy states; High K dielectric materials; MOSFETs; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796812

Filename

4796812