Title :
1-Gbit/s, single-mode operation of vertical cavity lasers emitting at 1.54 μm
Author :
Blixt, Peter ; Babic, Dubravko I. ; Margalit, Near M. ; Reynolds, Thomas E. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In this paper, we used double-fused vertical cavity lasers (VCLs) with strain compensated InGaAsP quantum wells reported. All of our measurements were performed on a device with a diameter of 10 μm. The room-temperature threshold current was 3.0 mA, while the threshold voltage was 3.0 V.
Keywords :
III-V semiconductors; compensation; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical transmitters; quantum well lasers; 10 mum; 3 V; 3 mA; Gbit/s single-mode operation; InGaAsP; InGaAsP quantum well lasers; double-fused vertical cavity lasers; room-temperature threshold current; strain compensated; threshold voltage; vertical cavity lasers; Bandwidth; Diode lasers; Frequency; High speed optical techniques; Optical fiber testing; Optical receivers; Probes; Signal analysis; Transfer functions; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907597
