Novel model for cell - system interaction (MCSI) in NAND Flash

For the first time a stochastic model of the program operation in NAND flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.