Title :
In situ thickness monitor for conducting films
Author :
Khan, S.A. ; Farmer, J.B. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytech. Inst., NY, USA
Abstract :
A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<>
Keywords :
microwave measurement; monitoring; probes; thickness measurement; Si; VLSI; adhesion layers; conducting films; diffusion barriers; end-point detector; in situ type; metal etching; microwave probe; thickness monitor; Adhesives; Conductive films; Conductivity; Loss measurement; Microwave measurements; Monitoring; Probes; Semiconductor films; Thickness measurement; Very large scale integration;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188314
