DocumentCode
2932435
Title
In situ thickness monitor for conducting films
Author
Khan, S.A. ; Farmer, J.B. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution
Rensselaer Polytech. Inst., NY, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
1561
Abstract
A microwave probe for measuring the thickness of conducting films has been fabricated and characterized. A difference of up to 20 dB has been demonstrated between the two extrema of very small and infinitely large sheet resistivity for conducting films deposited on Si. Since the return loss will change by this amount as film thickness is increased from zero, simulation results indicate that the probe should be very effective in measuring the thickness of typical adhesion layers/diffusion barriers in VLSI and as an end-point detector in metal etching.<>
Keywords
microwave measurement; monitoring; probes; thickness measurement; Si; VLSI; adhesion layers; conducting films; diffusion barriers; end-point detector; in situ type; metal etching; microwave probe; thickness monitor; Adhesives; Conductive films; Conductivity; Loss measurement; Microwave measurements; Monitoring; Probes; Semiconductor films; Thickness measurement; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188314
Filename
188314
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