Title :
Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
Author :
Komori, Yosuke ; Kido, Masaru ; Kito, Masaru ; Katsumata, Ryota ; Fukuzumi, Yoshiaki ; Tanaka, Hiroyasu ; Nagata, Yuzo ; Ishiduki, Megumi ; Aochi, Hideaki ; Nitayama, Akihiro
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Yokohama
Abstract :
Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.
Keywords :
NAND circuits; flash memories; silicon compounds; BiCS flash memory; NAND-string operation; SiN; bit-cost scalable structure; memory film stack; program-erase operation; ultra high density storage device; Costs; Electronic mail; FETs; Flash memory; Information systems; Semiconductor films; Silicon compounds; Stress control; Substrates; Testing;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796831
