Title :
A new empirical nonlinear model for HEMT-devices
Author :
Angelov, I. ; Zirath, H. ; Rorsman, N.
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A novel large-signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length delta -doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.<>
Keywords :
S-parameters; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC parameters; S-parameters; characteristic transconductance peak; current-voltage characteristic; delta-doped device; empirical nonlinear model; gate-drain capacitances; gate-source capacitance; high-electron-mobility transistors; large-signal model; mixers; model parameter extraction; multipliers; nonlinear circuits; pseudomorphic HEMT; submicron gate-length; Capacitance; Current-voltage characteristics; HEMTs; MODFETs; Nonlinear circuits; PHEMTs; Parameter extraction; Predictive models; Scattering parameters; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188320
