A new empirical nonlinear model for HEMT-devices

Author

Angelov, I. ; Zirath, H. ; Rorsman, N.

Author_Institution

Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1992

fDate

1-5 June 1992

Firstpage

1583

Abstract

A novel large-signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length delta -doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.<>

Keywords

S-parameters; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC parameters; S-parameters; characteristic transconductance peak; current-voltage characteristic; delta-doped device; empirical nonlinear model; gate-drain capacitances; gate-source capacitance; high-electron-mobility transistors; large-signal model; mixers; model parameter extraction; multipliers; nonlinear circuits; pseudomorphic HEMT; submicron gate-length; Capacitance; Current-voltage characteristics; HEMTs; MODFETs; Nonlinear circuits; PHEMTs; Parameter extraction; Predictive models; Scattering parameters; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188320

Filename

188320