Title :
ReverseAge: An online NBTI combating technique using time borrowing
Author :
Khan, Seyab ; Hamdioui, Said
Author_Institution :
Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
As semiconductor manufacturing has entered into the nanoscale era, Negative Bias Temperature Instability (NBTI) has become one of the most significant aging mechanisms leading to reliability issues. This paper presents ReverseAge, a technique that detects delay due to NBTI and utilizes design timing margins to ensure reliable circuit operation. First, it presents a scheme to detect the NBTI induced delay. Second, it presents a technique to tolerate the errors; the technique exploits the available design timing margins to compensate for the NBTI induced delay. The evaluation of ReverseAge has been performed by integrating it in an ISCAS-89 benchmark circuit. The simulation results show 3× reliability improvements with respect to state-of-the-art. The improvement comes at the cost of 3.77% area and 1.4% power overheads.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit reliability; semiconductor device reliability; ISCAS-89 benchmark circuit; NBTI-induced delay; aging mechanisms; circuit operation reliability; design timing margins; negative bias temperature instability; online NBTI combating technique; reliability improvements; reverseage technique; semiconductor manufacturing; time borrowing; Clocks; Delay; Integrated circuit modeling; Logic gates; Monitoring; Silicon;
Conference_Titel :
Design and Test Workshop (IDT), 2011 IEEE 6th International
Conference_Location :
Beirut
Print_ISBN :
978-1-4673-0468-9
Electronic_ISBN :
2162-0601
DOI :
10.1109/IDT.2011.6123098