Title :
Optical and electrical properties of bandgap shifted 1.55-μm laser diodes
Author :
Koteles, Emil S. ; He, J.J. ; Poole, P.J. ; Davies, M. ; Dion, M. ; Feng, Y. ; Charbonneau, S. ; Goldberg, R. ; Mitchell, I.V.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In this paper we report on optical and electrical properties of 1.55-μm InGaAsP-InP QW waveguide laser diodes blue-shifted using high-energy ion implantation and rapid thermal annealing. We demonstrate that, after shifting, waveguide losses are not increased and there is no significant change in the electrical properties of electroabsorptive modulators and laser diodes. Thus, this is a very attractive technique for achieving inexpensive and reliable photonic-integrated circuits (PIG).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; ion implantation; laser transitions; optical communication equipment; optical losses; quantum well lasers; rapid thermal annealing; spectral line shift; waveguide lasers; 1.55 mum; 1.55-μm laser diodes; InGaAsP-InP; InGaAsP-InP QW waveguide laser diodes; bandgap shifted; blue-shifted; electrical properties; electroabsorptive modulators; high-energy ion implantation; optical properties; rapid thermal annealing; reliable photonic-integrated circuits; waveguide losses; Circuits; Diode lasers; Ion implantation; Optical losses; Optical modulation; Optical waveguides; Particle beam optics; Photonic band gap; Rapid thermal annealing; Waveguide transitions;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907618
