Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, strained-Si and strained-Ge, p-MOS DGFETs have been presented and the optimum strain and channel/surface orientations for highest drive-lowest delay-lowest leakage have been obtained.