DocumentCode
2932799
Title
Body contact based TSV equalizer
Author
Mohamed, Kartini ; Elrouby, A. ; Ismail, Yousr ; Ragai, Hani
Author_Institution
Mentor Graphics, Cairo, Egypt
fYear
2011
fDate
11-14 Dec. 2011
Firstpage
114
Lastpage
117
Abstract
This paper shows that the TSV capacitance is highly dependent on the placement and count of adjacent ground body contacts and has a value of tens of femto farads in a typical current technology. Simulations show that the total TSV capacitance increases with the increase in the body contacts count or the closer the body contacts are to the TSV. This increase is due to the fact that the more body contacts, the closer the effective virtual ground plate of the TSV capacitance. Body contacts reduce the crosstalk and distortion caused by the TSV interconnects in a 3D IC system. Moreover, it alleviates noise coupling.
Keywords
capacitance; equalisers; integrated circuit interconnections; three-dimensional integrated circuits; 3D IC system; TSV capacitance; TSV interconnects; body contact based TSV equalizer; Capacitance; Integrated circuit modeling; Silicon; Solid modeling; Three dimensional displays; Through-silicon vias; Body contact; Equalizer; Lumped model; TSV; Three-Dimensional ICs; Through Silicon Via;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test Workshop (IDT), 2011 IEEE 6th International
Conference_Location
Beirut
ISSN
2162-0601
Print_ISBN
978-1-4673-0468-9
Electronic_ISBN
2162-0601
Type
conf
DOI
10.1109/IDT.2011.6123113
Filename
6123113
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