DocumentCode :
2932799
Title :
Body contact based TSV equalizer
Author :
Mohamed, Kartini ; Elrouby, A. ; Ismail, Yousr ; Ragai, Hani
Author_Institution :
Mentor Graphics, Cairo, Egypt
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
114
Lastpage :
117
Abstract :
This paper shows that the TSV capacitance is highly dependent on the placement and count of adjacent ground body contacts and has a value of tens of femto farads in a typical current technology. Simulations show that the total TSV capacitance increases with the increase in the body contacts count or the closer the body contacts are to the TSV. This increase is due to the fact that the more body contacts, the closer the effective virtual ground plate of the TSV capacitance. Body contacts reduce the crosstalk and distortion caused by the TSV interconnects in a 3D IC system. Moreover, it alleviates noise coupling.
Keywords :
capacitance; equalisers; integrated circuit interconnections; three-dimensional integrated circuits; 3D IC system; TSV capacitance; TSV interconnects; body contact based TSV equalizer; Capacitance; Integrated circuit modeling; Silicon; Solid modeling; Three dimensional displays; Through-silicon vias; Body contact; Equalizer; Lumped model; TSV; Three-Dimensional ICs; Through Silicon Via;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Test Workshop (IDT), 2011 IEEE 6th International
Conference_Location :
Beirut
ISSN :
2162-0601
Print_ISBN :
978-1-4673-0468-9
Electronic_ISBN :
2162-0601
Type :
conf
DOI :
10.1109/IDT.2011.6123113
Filename :
6123113
Link To Document :
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