• DocumentCode
    2932799
  • Title

    Body contact based TSV equalizer

  • Author

    Mohamed, Kartini ; Elrouby, A. ; Ismail, Yousr ; Ragai, Hani

  • Author_Institution
    Mentor Graphics, Cairo, Egypt
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    This paper shows that the TSV capacitance is highly dependent on the placement and count of adjacent ground body contacts and has a value of tens of femto farads in a typical current technology. Simulations show that the total TSV capacitance increases with the increase in the body contacts count or the closer the body contacts are to the TSV. This increase is due to the fact that the more body contacts, the closer the effective virtual ground plate of the TSV capacitance. Body contacts reduce the crosstalk and distortion caused by the TSV interconnects in a 3D IC system. Moreover, it alleviates noise coupling.
  • Keywords
    capacitance; equalisers; integrated circuit interconnections; three-dimensional integrated circuits; 3D IC system; TSV capacitance; TSV interconnects; body contact based TSV equalizer; Capacitance; Integrated circuit modeling; Silicon; Solid modeling; Three dimensional displays; Through-silicon vias; Body contact; Equalizer; Lumped model; TSV; Three-Dimensional ICs; Through Silicon Via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Test Workshop (IDT), 2011 IEEE 6th International
  • Conference_Location
    Beirut
  • ISSN
    2162-0601
  • Print_ISBN
    978-1-4673-0468-9
  • Electronic_ISBN
    2162-0601
  • Type

    conf

  • DOI
    10.1109/IDT.2011.6123113
  • Filename
    6123113