• DocumentCode
    2932839
  • Title

    Adjustable supply voltages and refresh cycle for process variations, temperature changes, and device degradation adaptation in 1T1C embedded DRAM

  • Author

    Tran, Le-Nguyen ; Kurdahi, Fadi J. ; Eltawil, Ahmed M. ; Aljumah, Abdullah

  • Author_Institution
    Univ. of California Irvine, Irvine, CA, USA
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    124
  • Lastpage
    129
  • Abstract
    In the present investigation, we have devised an innovative approach to dynamically set supply voltages and refresh cycle for 1T1C embedded Dynamic Random Access Memory (eDRAM). The approach helps us to reduced power consumption. The eDRAM is usually designed to sustain the worst operating conditions, and the chip is very rarely operated under these conditions. We, thus exploit the design slack while operating under more favorable conditions to power consumptions. Simulation results indicated that the power consumption can be saved more than 10 times when the chip is normally operated, which is highly significant in the chip operation. This keeps the chip cool and operating temperature will be well under control which helps in averting device degradation and ultimate breakdown.
  • Keywords
    DRAM chips; electric breakdown; low-power electronics; 1T1C embedded DRAM; device degradation adaptation; dynamic random access memory; power consumption; process variations; refresh cycle; supply voltages; temperature changes; ultimate breakdown; Arrays; Leakage current; Power demand; Temperature sensors; Threshold voltage; Transistors; Voltage control; adaptive design; eDRAM; low-power consumption; process variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Test Workshop (IDT), 2011 IEEE 6th International
  • Conference_Location
    Beirut
  • ISSN
    2162-0601
  • Print_ISBN
    978-1-4673-0468-9
  • Electronic_ISBN
    2162-0601
  • Type

    conf

  • DOI
    10.1109/IDT.2011.6123115
  • Filename
    6123115