DocumentCode
2932839
Title
Adjustable supply voltages and refresh cycle for process variations, temperature changes, and device degradation adaptation in 1T1C embedded DRAM
Author
Tran, Le-Nguyen ; Kurdahi, Fadi J. ; Eltawil, Ahmed M. ; Aljumah, Abdullah
Author_Institution
Univ. of California Irvine, Irvine, CA, USA
fYear
2011
fDate
11-14 Dec. 2011
Firstpage
124
Lastpage
129
Abstract
In the present investigation, we have devised an innovative approach to dynamically set supply voltages and refresh cycle for 1T1C embedded Dynamic Random Access Memory (eDRAM). The approach helps us to reduced power consumption. The eDRAM is usually designed to sustain the worst operating conditions, and the chip is very rarely operated under these conditions. We, thus exploit the design slack while operating under more favorable conditions to power consumptions. Simulation results indicated that the power consumption can be saved more than 10 times when the chip is normally operated, which is highly significant in the chip operation. This keeps the chip cool and operating temperature will be well under control which helps in averting device degradation and ultimate breakdown.
Keywords
DRAM chips; electric breakdown; low-power electronics; 1T1C embedded DRAM; device degradation adaptation; dynamic random access memory; power consumption; process variations; refresh cycle; supply voltages; temperature changes; ultimate breakdown; Arrays; Leakage current; Power demand; Temperature sensors; Threshold voltage; Transistors; Voltage control; adaptive design; eDRAM; low-power consumption; process variation;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test Workshop (IDT), 2011 IEEE 6th International
Conference_Location
Beirut
ISSN
2162-0601
Print_ISBN
978-1-4673-0468-9
Electronic_ISBN
2162-0601
Type
conf
DOI
10.1109/IDT.2011.6123115
Filename
6123115
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