Title :
Application of spin-torque diode effect to the analysis of spin-transfer switching in MgO-based magnetic tunnel junctions
Author :
Kubota, H. ; Fukushima, A. ; Ootani, Y. ; Yuasa, S. ; Ando, K. ; Maehara, H. ; Tsunekawa, K. ; Djayaprawira, D.D. ; Watanabe, N. ; Suzuki, Y.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
Multilayers of buffer/Pt-Mn/Co-Fe/Ru/Co60Fe20B20 (3.2 nm)/Mg (0.4 nm)/MgO (0.6 nm)/ Co61Fe7Ni15B15 (3 nm)/Ta/Ru is prepared on thermally oxidized Si substrates by UHV sputtering system (ANELVA C7100). The free layer Co-Fe-Ni-B has low magnetostriction, which is important characteristics for MRAM with high endurance for write/erase cycles. After annealing at 330degC, the film was patterned into 80 nm x 170 nm ellipsoids. The observed R-Hcurves showed sharp switching between low and high resistance states. The MR ratio was about 80% and resistance-area product was about 2 Omegam2. STS effect for MTJ is applied to evaluate the spin-transfer switching.
Keywords :
annealing; boron alloys; cobalt; cobalt alloys; iron; iron alloys; magnesium; magnesium compounds; magnetic multilayers; magnetic switching; manganese; nickel alloys; platinum; ruthenium; silicon; tantalum; tunnelling magnetoresistance; Co60Fe20B20-MgO-Co61Fe7Ni15B15-Si; CoFe; PtMn; R-H curves; Si; UHV sputtering system; annealing; buffer layer; magnetic tunnel junctions; magnetoresistance ratio; multilayers; spin-torque diode effect; spin-transfer switching; thermally oxidized substrates; Annealing; Diodes; Iron; Magnetic analysis; Magnetic multilayers; Magnetic switching; Magnetic tunneling; Magnetostriction; Sputtering; Substrates;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375410
