• DocumentCode
    2933052
  • Title

    Oxide mobility enhancement due to bias sputtering in perpendicular recording media

  • Author

    Lee, H. ; Bain, J.A. ; Laughlin, D.E.

  • Author_Institution
    Carnegie Mellon Univ., Pittsburgh
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    8
  • Lastpage
    8
  • Abstract
    This study addresses some consideration of oxide mobility in two types of oxide composite perpendicular media A (CoCrPt-SiO2) and B (FePt-MgO). The effects of bias sputtering on the morphology of the deposited composite film was examined. Results show that although the preferential sputtering seems different, the enhanced grain separation in the biased films is similar for the two media, which suggests that biasing is generally effective in driving the segregation. This is ascribed to an increase in Ar ion bombardment of the substrate during bias sputtering, which helps to increase mobility of the oxide molecules on the growing surface such that they reach grain boundaries.
  • Keywords
    chromium alloys; cobalt alloys; composite materials; ferromagnetic materials; grain boundaries; iron alloys; magnesium compounds; magnetic thin films; perpendicular magnetic recording; platinum alloys; segregation; silicon compounds; sputter deposition; surface diffusion; surface morphology; Ar ion bombardment; CoCrPt-SiO2; FePt-MgO; bias sputtering; composite perpendicular recording media; film morphology; grain boundaries; grain separation; oxide mobility; oxide molecules; preferential sputtering; segregation; Data storage systems; Grain boundaries; Lead compounds; Magnetic films; Magnetic noise; Morphology; Perpendicular magnetic recording; Sputtering; Substrates; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375417
  • Filename
    4261442