• DocumentCode
    293307
  • Title

    On design of analogue multipliers using gallium arsenide MESFETs

  • Author

    Lecouls, R. ; Haigh, D.G. ; Radmore, P.M. ; Webster, D.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    5
  • fYear
    1994
  • fDate
    30 May-2 Jun 1994
  • Firstpage
    677
  • Abstract
    A previous method of synthesis for transconductor and multiplier-functions using Gallium Arsenide (GaAs) MESFETs modelled by a square-law drain current versus gate-source voltage-(Vgs) characteristic is extended to the case of a general power law device characteristic and applied to the multiplier case. Compensation for the effect of device output conductance, modelled as a Vds-to-V gs electrostatic feedback effect, is considered and results are shown by simulation examples
  • Keywords
    III-V semiconductors; MESFET circuits; analogue multipliers; gallium arsenide; GaAs; analogue multipliers; compensation; design; drain current gate-source voltage characteristic; electrostatic feedback; gallium arsenide MESFETs; output conductance; power law; simulation; synthesis; transconductor; Circuit synthesis; DH-HEMTs; Educational institutions; FETs; Gallium arsenide; MESFETs; Optical wavelength conversion; Power engineering and energy; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-1915-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.1994.409464
  • Filename
    409464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=293307