Title :
Monolithic OEIC photoreceivers for a broad spectrum of applications
Author :
Chandrasekhar, S.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. More than fifteen years since the first Optoelectronic integrated circuit (OEIC) photoreceivers have come a long way and are today the most widely researched subject worldwide. The multiplicity of devices (both photodetectors and phototransistors) available in the InP material system, combined with the flexibility of epitaxial crystal growth has resulted in several excellent implementations of high-performance OEIC photoreceivers. With the growth of the fiber-to-the-home market, there is expected to be a large demand for photonic components, and the monolithic photoreceiver has the performance and the capability to satisfy the requirements for this application. The strongest feature of monolithic integration is in realizing replicas of the same circuit with high yield. This is particularly attractive for optical communication systems.
Keywords :
III-V semiconductors; epitaxial growth; indium compounds; integrated optoelectronics; optical fibre subscriber loops; optical receivers; photodetectors; phototransistors; semiconductor growth; InP; InP material system; OEIC photoreceivers; epitaxial crystal growth; fiber-to-the-home market; high yield; high-performance OEIC photoreceivers; monolithic OEIC photoreceivers; monolithic integration; monolithic photoreceiver; optical communication systems; photodetectors; photonic components; phototransistors; replicas; Electrons; HEMTs; Laboratories; MODFETs; Monolithic integrated circuits; Optical receivers; Optoelectronic devices; PIN photodiodes; Photodetectors; Wavelength division multiplexing;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907644