Title :
A 920-1650-nm high-current photodiode
Author :
Davis, G.A. ; Weiss, R.E. ; LaRue, R.A. ; Williams, K.J. ; Esman, R.D.
Author_Institution :
Intevac ATD, Palo Alto, CA, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In this paper we describe an InGaAs-based photodiode, which has demonstrated continuous 140-mA output current at 2-W power dissipation with 0.97-A/W conversion efficiency at 1320 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; photodiodes; 1320 nm; 140 mA; 2 W; 920 to 1650 nm; IR detectors; InGaAs; InGaAs-based photodiode; W power dissipation; conversion efficiency; mA output current; nm high-current photodiode; Detectors; Doped fiber amplifiers; Frequency; Laser tuning; Optical distortion; Phase modulation; Photodiodes; Power dissipation; Quantum well lasers; Ring lasers;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907650
