DocumentCode :
2933344
Title :
Investigation of semiconductor nanostructures photovoltaic for next generation solar cells
Author :
Rajagopalan, Harish ; Brockett, Timothy ; Rahmat-Samii, Yahya
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
fYear :
2011
fDate :
3-8 July 2011
Firstpage :
1089
Lastpage :
1091
Abstract :
The purpose of this paper is to investigate the electromagnetic performance of various potential semiconductor nanostructures photovoltaic for future solar cells. GaAs is used as the semiconductor for this particular study. Nanostructures such as nanocones, nanopillars, and nanoprisms are compared systematically for their reflection and absorbance properties. The presence of nanostructures reduces the optical reflection and increases absorption as compared to conventional flat cell geometries. Initial studies show that nanocones and nanoprisms have the very good electromagnetic performance in terms of reflection and absorption over the solar spectrum. It is also shown that the nanocone arrays have robust performance for different polarizations and angles of incidence making them an attractive solution for solar cell designs.
Keywords :
III-V semiconductors; gallium arsenide; nanostructured materials; solar cells; GaAs; electromagnetic performance; flat cell geometry; nanocone arrays; next generation solar cells; semiconductor nanostructure photovoltaic; Absorption; Gallium arsenide; Geometry; Nanostructures; Optical reflection; Photovoltaic cells; nanocones; nanopillars; nanoprisms; photovoltaic; semiconductor; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on
Conference_Location :
Spokane, WA
ISSN :
1522-3965
Print_ISBN :
978-1-4244-9562-7
Type :
conf
DOI :
10.1109/APS.2011.5996470
Filename :
5996470
Link To Document :
بازگشت