• DocumentCode
    2933555
  • Title

    Consideration of conductive filament for realization of low-current and highly-reliable TaOx ReRAM

  • Author

    Yasuhara, R. ; Ninomiya, Tamotsu ; Muraoka, S. ; Wei, Zhihui ; Katayama, Kengo ; Takagi, Toshiyuki

  • Author_Institution
    Device Solutions Center, Panasonic Corp., Kyoto, Japan
  • fYear
    2013
  • fDate
    26-29 May 2013
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    Characteristics and their origin of a conductive filament in TaOx ReRAM are investigated. The results of systematic experimentation demonstrate that the formation of a small conductive filament with high density of oxygen vacancies, achieved by controlling the oxygen content of the resistance-switching material and forming/set current, is the key to achieving low-current switching combined with long retention.
  • Keywords
    electric resistance; oxygen; random-access storage; tantalum compounds; vacancies (crystal); TaOx; conductive filament; highly-reliable ReRAM; low-current ReRAM; low-current switching; oxygen content; oxygen vacancies; resistance-switching material; Oxygen; Reliability; Resistance; Switches; Systematics; Filament; Oxygen vacancy; ReRAM; Retention;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2013 5th IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6168-2
  • Type

    conf

  • DOI
    10.1109/IMW.2013.6582091
  • Filename
    6582091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2933555