Title :
Highly scalable and manufacturable heterogeneous charge trap NAND technology
Author :
Haddad, Sandro ; Fang, Shao-Yun ; Chang, Kuo-Pin ; Shetty, Sachin ; Chen, Ci ; Kim, Unha ; Fang, Tao ; Ortiz, S. ; Thurgate, T. ; Ramsbey, M. ; Kang, I. ; Janai, M. ; Neo, J. ; Singh, Praveen Kumar ; Nagatani, G. ; Samqui, A. ; Sugino, R. ; Hui, Alexis ;
Author_Institution :
Spansion, Inc., Sunnyvale, CA, USA
Abstract :
For the first time, we will present production-ready heterogeneous charge trap NAND technology based on Silicon Rich Nitride. The competitive product performance, reliability, and manufacturability demonstrated at the 43nm node, in conjunction with the planar cell architecture have laid the foundation for scaling to <; 20nm.
Keywords :
NAND circuits; circuit reliability; electron traps; random-access storage; silicon compounds; NAND technology; SiN; heterogeneous charge trap memory; planar cell architecture; product performance; reliability; silicon rich nitride storage layer; size 43 nm; Computer architecture; Films; Interference; Logic gates; Nonvolatile memory; Programming; Silicon; Charge Trap Memory; Heterogeneous nitride; NAND; SiRN; Silicon-Rich Nitride;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582098
