Title :
A novel multilayer Inter-Gate Dielectric enabling up to 18V Program / Erase window for planar NAND flash
Author :
Breuil, L. ; Lisoni, J. ; Blomme, P. ; Van den bosch, G. ; Van Houdt, J.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20 nm node causes important loss of coupling factor. In order to recover the Program / Erase window, a Hybrid Floating Gate featuring a high work function metal on top of Si, together with a high-k Inter-Gate Dielectric are needed. In this paper, we develop a multilayer Inter-Gate Dielectric based on HfAlO and Al2O3, combined with a Si/TiN Hybrid Floating Gate. By optimizing the stack structure, a window as large as ~18V could be obtained.
Keywords :
aluminium compounds; field effect memory circuits; flash memories; hafnium compounds; high-k dielectric thin films; silicon; titanium compounds; Al2O3; HfAlO; Si-TiN; coupling factor; erase window; high work function metal; high-k intergate dielectric; hybrid floating gate; multilayer intergate dielectric; planar NAND flash; planar structure; program window; stack structure; voltage 18 V; Aluminum oxide; Dielectrics; Flash memories; High K dielectric materials; Programming; Silicon; Tin; High-k dielectrics; Hybrid floating gate; Inter-gate dielectic; NAND Flash;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582100
