Title :
Simulation of polarity independent RESET in electrochemical metallization memory cells
Author :
Menzel, Stephan ; Valov, I. ; Waser, Rainer ; Adler, Nico ; van den Hurk, Job ; Tappertzhofen, S.
Author_Institution :
Peter Grunberg Inst. (PGI-7), Forschungszentrum Julich, Julich, Germany
Abstract :
Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation in ECM cells, which is capable of explaining the occurrence of polarity-independent RESET switching. The model is based on the thermally activated electrochemical dissolution of a conducting filament.
Keywords :
integrated circuit metallisation; numerical analysis; random-access storage; ECM; bipolar operation; conducting filament; electrochemical dissolution; electrochemical metallization memory cells; nonvolatile memory; numerical simulation; polarity independent RESET switching; redox-based resistive switching devices; Conductivity; Electrodes; Electronic countermeasures; Mathematical model; Numerical models; Switches; Thermal conductivity; electrochemical metallization cells ECM; resistive switching memory (ReRAM); unipolar switching;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582106
