Title :
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs
Author :
Cabout, Thomas ; Perniola, L. ; Jousseaume, V. ; Grampeix, H. ; Nodin, J.F. ; Toffoli, A. ; Guillermet, M. ; Jalaguier, E. ; Vianello, E. ; Molas, G. ; Reimbold, Gilles ; De Salvo, B. ; Diokh, T. ; Candelier, P. ; Pirrotta, O. ; Padovani, A. ; Larcher, Lu
Author_Institution :
CEA LETI, Grenoble, France
Abstract :
This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. HfO2-RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e. -0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e. <; -0.05 V per hundred Celsius degree); disturb of HRS at fixed voltage showed to be independent of temperature; endurance up to 3.106 cycles, with optimized set of stress parameters showed no significant variation; data retention at 150 °C up to 68 days showed stable programming window, after different initial programming algorithms.
Keywords :
hafnium compounds; integrated circuit testing; random-access storage; reliability; thermal management (packaging); HRS; HfO2; RRAM devices; SET-RESET; data retention; forming operation; initial programming algorithms; low-field resistance reading; oxide-based RRAM; reliability; size 65 nm; stable programming window; temperature 150 degC; temperature impact; Hafnium compounds; Resistance; Switches; Temperature distribution; Temperature measurement; Temperature sensors; Resistive-switching random access memory (RRAM); bipolar operation; data retention; disturb; endurance;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582112
