Title :
A 55-nm, 0.86-Volt operation, 125MHz high speed, 75uA/MHz low power, wide voltage supply range 2M-bit split-gate embedded Flash
Author :
Cho, C.Y.-S. ; Wang, J.C. ; Lin, Y.F. ; Chih, Y.D. ; Natarajan, Sriraam
Author_Institution :
Semicond. Manuf. Co. (tsmc), Hsinchu, Taiwan
Abstract :
Firstly a high-speed and low-power sense amplifier is implemented in 90-nm embedded Flash (64KX32) design based on split-gate Flash bitcell with good correlation of 90uA/MHz power and 50MHz speed in wide voltage supply range (VDD=0.86~1.32V, and VD33=1.6~3.6V). It shows less process dependent speed by design approach. In further 55-nm node, it demonstrates competitive features by post layout simulation with more competition of faster operation speed up to 125MHz (VDD=1.08V) but still keep merits of low-power read (75uA/MHz, 32 bits) and wide range supplies on both read and write (VDD=0.86~1.32V, and VD33=1.6~3.6V).
Keywords :
HF amplifiers; flash memories; low-power electronics; frequency 125 MHz; frequency 50 MHz; low-power read; low-power sense amplifier; post layout simulation; size 55 nm; size 90 nm; split-gate embedded flash memory; split-gate flash bitcell; voltage 0.86 V to 1.32 V; voltage 1.6 V to 3.6 V; word length 32 bit; Capacitance; Capacitors; Correlation; Sensors; Silicon; Split gate flash memory cells; embedded Flash; high speed; low power; sense amplifier; split-gate; wide range;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582114