Title :
Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer
Author :
Kim, Youngjae ; Chun, Byung-Kwan ; Kim, Dongkyu ; Hwang, Jae-Sang ; Kim, Sungho ; Rhee, June-Koo ; Kim, T.
Author_Institution :
Korea Univ., Seoul
Abstract :
The bias voltage dependence of tunneling magnetoresistance (TMR) for double barrier magnetic tunnel junction (DMTJ) CoFe/NiFeSiB/CoFe is investigated. The microstructure of the hybrid free layered DMTJs was examined by HRTEM.
Keywords :
boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; nickel alloys; silicon alloys; transmission electron microscopy; tunnelling magnetoresistance; CoFe-NiFeSiB-CoFe; TEM; TMR; bias voltage dependence; double barrier magnetic tunnel junction; hybrid free layered tunnel junction; microstructure; tunneling magnetoresistance; Amorphous magnetic materials; Amorphous materials; Electrons; Magnetic anisotropy; Magnetic tunneling; Materials science and technology; Perpendicular magnetic anisotropy; Physics; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375574
