Title :
Epitaxial lift-off arrays of GaAs LEDs over wafer-scale Si VLSI for optical interconnect technology
Author :
Chang, Wei ; Yablonovitch, Eli ; Dines, Eugene L. ; Pepe, Angel A. ; Ludwig, David
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In conclusion, we have developed a manufacturable and cost-effective epitaxial lift off (ELO) process to integrate a 2" GaAs wafer, containing LEDs, over 5" Si wafer with functioning dies.
Keywords :
III-V semiconductors; VLSI; epitaxial growth; gallium arsenide; light emitting diodes; optical fabrication; optical films; optical interconnections; semiconductor growth; 2 in; 5 in; GaAs; GaAs LEDs; GaAs wafer; LEDs; Si; Si wafer; cost-effective epitaxial lift off; epitaxial lift-off arrays; functioning dies; optical interconnect technology; wafer-scale Si VLSI; Corona; Electrodes; Electrooptic modulators; Gallium arsenide; Light emitting diodes; Optical arrays; Optical fiber devices; Optical interconnections; Polymer films; Very large scale integration;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907734
