Title :
High-reliability InAlGaAs/InAlAs superlattice avalanche photodiodes for 2.5-10 Gbit/s applications
Author :
Watanabe, I. ; Tsuji, M. ; Hayashi, M. ; Makita, K. ; Taguchi, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In summary, a lifetime over 1.0×105 hours at 50°C was attained by the simple mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SLAPDs) for the first time. This lifetime is in a sufficient level for 2.5-10 Gbit/s high-speed LAN and data-link applications.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical fibre LAN; semiconductor superlattices; 2.5 to 10 Gbit/s; Gbit/s applications; Gbit/s high-speed LAN; InAlGaAs-InAlAs; InAlGaAs-InAlAs superlattice avalanche photodiodes; InAlGaAs/InAlAs superlattice avalanche photodiodes; data-link applications; high-reliability; lifetime; mesa-structure; Absorption; Aging; Avalanche photodiodes; Dark current; Indium compounds; Indium phosphide; Local area networks; Superlattices; Testing; Voltage;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907741
