Title :
Magnetization Relaxation in Sputtered Thin Fe Films; A FMR study
Author :
Kuanr, B.K. ; Kuanr, A.V. ; Camley, R.E. ; Celinski, Z.
Abstract :
In this paper, the authors studied the ferromagnetic resonance (FMR) linewidth of thin Fe films in NM/Fe/NM structures (NM[30 Aring]=Al, Cu, Ti and Ta) to investigate the relaxation mechanism. Polycrystalline Fe films, with thicknesses of 20 to 300 Aring in steps of 20 Aring were grown by sputtering on GaAs(100) substrates. The experimental results and their interpretation agreed with the microscopic theories taking into account spin-current generated by the precession of magnetization in NM/Fe/NM films.
Keywords :
aluminium; copper; ferromagnetic materials; ferromagnetic resonance; interface magnetism; iron; magnetic relaxation; magnetic thin films; magnetisation; metallic thin films; spin polarised transport; tantalum; titanium; Al-Fe; Cu-Fe; FMR; GaAs; GaAs(100) substrate; Ta-Fe; Ti-Fe; ferromagnetic resonance linewidth; magnetization precession; magnetization relaxation; polycrystalline iron film; size 20 A to 300 A; spin-current; sputtered thin films; Damping; Educational institutions; Gallium arsenide; Iron; Light scattering; Magnetic films; Magnetic resonance; Magnetization; Springs; Transistors;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375597
