Title :
Solid State Storage, Limits of Flash Memory
Author_Institution :
Intel, Santa Clara
Abstract :
Flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moved into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. Based on the introduction of material innovations, it is expected that flash memory cell can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future.
Keywords :
flash memories; nanotechnology; random-access storage; Moore law; NAND flash; NOR flash; flash memory; nanotechnology; nonvolatile memories; phase change memory; solid state storage; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanotechnology; Nonvolatile memory; Solid state circuits; Stress; Technological innovation; Thickness control; Tunneling;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375601