DocumentCode :
2934767
Title :
Solid State Storage, Limits of Flash Memory
Author :
Fazio, A.
Author_Institution :
Intel, Santa Clara
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
101
Lastpage :
101
Abstract :
Flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moved into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. Based on the introduction of material innovations, it is expected that flash memory cell can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future.
Keywords :
flash memories; nanotechnology; random-access storage; Moore law; NAND flash; NOR flash; flash memory; nanotechnology; nonvolatile memories; phase change memory; solid state storage; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanotechnology; Nonvolatile memory; Solid state circuits; Stress; Technological innovation; Thickness control; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.375601
Filename :
4261535
Link To Document :
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