High frequency one dimensional single electron transport in GaAs heterostructures

Author

Pepper, M. ; Shilton, J.M. ; Talyanski, V.I. ; Cunningham, J.E. ; Ford, C.J.B. ; Smith, C.G. ; Ritchie, D.A. ; Jones, G.A.C.

Author_Institution

Cavendish Lab., Cambridge Univ., UK

fYear

1998

fDate

6-10 July 1998

Firstpage

133

Abstract

Summary form only given, as follows. Work on surface acoustic wave (SAW) induced single electron flow is described. A current given by ef is obtained where e is the electron charge and f is the frequency, near 2.8 GHz. Present accuracy for measurement of e is better than 0.1%. Prospects for improvement will be discussed.

Keywords

III-V semiconductors; acoustoelectric effects; charge density waves; electrometers; gallium arsenide; high field effects; mesoscopic systems; quantum interference phenomena; semiconductor quantum dots; surface acoustic waves; 1D electron gas; 2.8 GHz; GaAs; HF 1D single electron transport; III-V heterostructures; Mott-Hubbard gap; SAW induced single electron flow; ballistic electron transport; chain of moving quantum dots; current quantisation; electron charge; sliding CDW; sliding Mott insulator; split gates; Acoustic transducers; Acoustic waves; Electrons; Frequency; Gallium arsenide; Heterojunctions; Laboratories; Quantization; Surface acoustic waves; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 1998 Conference on

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5018-9

Type

conf

DOI

10.1109/CPEM.1998.699820

Filename

699820