Tunnelling Anisotropic MagnetoResistance (TAMR)

Author

Gould, C. ; Ruester, C. ; Schmidt, G. ; Molenkamp, L.

Author_Institution

Univ. of Wuerzburg, Wuerzburg

fYear

2006

fDate

8-12 May 2006

Firstpage

116

Lastpage

116

Abstract

This paper reports on the the discovery of a novel magnetoresistance called tunnelling anisotropic magnetoresistance (TAMR), which may be harnessed for device applications as both volatile and non-volatile memory. TAMR arises when tunnelling into a material with large spin orbit coupling and magnetic anisotropy such as the ferromagnetic semiconductor (Ga,Mn)As. It results from the strong coupling between the holes and the Mn system, which translates the magnetic anisotropy into an anisotropy in the transport density of states (DOS). This effect was first observed in a Au/AlO_x/(Ga,Mn)As tunnel structure.

Keywords

III-V semiconductors; aluminium compounds; electronic density of states; ferromagnetic materials; gallium arsenide; gold; magnetic anisotropy; semimagnetic semiconductors; tunnelling magnetoresistance; Au-AlO_x-GaMnAs; DOS; TAMR; ferromagnetic semiconductor; magnetic anisotropy; transport density of states; tunnelling anisotropic magnetoresistance; Anisotropic magnetoresistance; Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic tunneling; Metals industry; Perpendicular magnetic anisotropy; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375616

Filename

4261550