Title :
Tunnelling Anisotropic MagnetoResistance (TAMR)
Author :
Gould, C. ; Ruester, C. ; Schmidt, G. ; Molenkamp, L.
Author_Institution :
Univ. of Wuerzburg, Wuerzburg
Abstract :
This paper reports on the the discovery of a novel magnetoresistance called tunnelling anisotropic magnetoresistance (TAMR), which may be harnessed for device applications as both volatile and non-volatile memory. TAMR arises when tunnelling into a material with large spin orbit coupling and magnetic anisotropy such as the ferromagnetic semiconductor (Ga,Mn)As. It results from the strong coupling between the holes and the Mn system, which translates the magnetic anisotropy into an anisotropy in the transport density of states (DOS). This effect was first observed in a Au/AlOx/(Ga,Mn)As tunnel structure.
Keywords :
III-V semiconductors; aluminium compounds; electronic density of states; ferromagnetic materials; gallium arsenide; gold; magnetic anisotropy; semimagnetic semiconductors; tunnelling magnetoresistance; Au-AlOx-GaMnAs; DOS; TAMR; ferromagnetic semiconductor; magnetic anisotropy; transport density of states; tunnelling anisotropic magnetoresistance; Anisotropic magnetoresistance; Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic tunneling; Metals industry; Perpendicular magnetic anisotropy; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375616
