Title :
Charge offset and noise in SET transistors [for capacitance standard application]
Author :
Zimmerman, N.M. ; Cobb, J.L.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlO/sub x//Al tunnel junctions. Previous work has shown that significant time-dependent noise will arise from locations outside the tunnel junctions, as well as within the junctions. Our ongoing work includes attempts to reduce or eliminate the charge offset and noise in fabricated devices.
Keywords :
1/f noise; Coulomb blockade; MIM devices; aluminium; aluminium compounds; capacitance measurement; current fluctuations; electrometers; electron device noise; measurement standards; single electron transistors; Al-AlO-Al; Al/AlO/sub x//Al tunnel junctions; Coulomb blockade; capacitance standard; charge offset noise; electron counting; electron pump; islands; single-electron tunneling transistors; time dependent noise; time-dependent noise; two-level fluctuators; Capacitance; Capacitors; Integrated circuit noise; NIST; Noise measurement; Noise reduction; Single electron transistors; Temperature; Tunneling; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699823
