Charge offset and noise in SET transistors [for capacitance standard application]

Author

Zimmerman, N.M. ; Cobb, J.L.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1998

fDate

6-10 July 1998

Firstpage

138

Lastpage

139

Abstract

We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlO/sub x//Al tunnel junctions. Previous work has shown that significant time-dependent noise will arise from locations outside the tunnel junctions, as well as within the junctions. Our ongoing work includes attempts to reduce or eliminate the charge offset and noise in fabricated devices.

Keywords

1/f noise; Coulomb blockade; MIM devices; aluminium; aluminium compounds; capacitance measurement; current fluctuations; electrometers; electron device noise; measurement standards; single electron transistors; Al-AlO-Al; Al/AlO/sub x//Al tunnel junctions; Coulomb blockade; capacitance standard; charge offset noise; electron counting; electron pump; islands; single-electron tunneling transistors; time dependent noise; time-dependent noise; two-level fluctuators; Capacitance; Capacitors; Integrated circuit noise; NIST; Noise measurement; Noise reduction; Single electron transistors; Temperature; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 1998 Conference on

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5018-9

Type

conf

DOI

10.1109/CPEM.1998.699823

Filename

699823