Title :
Low noise single electron transistors of stacked design
Author :
Krupenin, V.A. ; Presnov, D.E. ; Savvateev, M.N. ; Scherer, H. ; Zorin, A.B. ; Niemeyer, J.
Author_Institution :
Dept. of Cryoelectron., Moscow State Univ., Russia
Abstract :
Overlap-type single-electron transistors with the different island to substrate contact areas were studied. We found that background charge noise reduces with the contact area reduction, that clearly indicates to the substrate origin of the noise. For transistors with the smallest contact area with the substrate (stacked configuration), we reached the noise level of 2.5.10/sup -5/ e//spl radic/Hz at 10 Hz, which is the lowest noise figure of SET devices measured so far.
Keywords :
1/f noise; MIM devices; electrometers; electron device noise; single electron transistors; 1/f noise; 10 Hz; MIM tunnel junctions; background charge noise; contact area reduction; different island/substrate contact areas; electrometer; equivalent circuit; low noise; overlap-type single-electron transistors; stacked design; Acoustical engineering; Background noise; Circuit noise; Fluctuations; Low-frequency noise; Noise measurement; Noise reduction; Single electron transistors; Substrates; Tunneling;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699824
