DocumentCode :
2935935
Title :
Electromganetic field control of electron spin magnetic resonance frequency in silicon donors for solid-state quantum computing
Author :
Mirzaei, Hamidreza ; Hui, Hon Tat
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2011
fDate :
3-8 July 2011
Firstpage :
1601
Lastpage :
1604
Abstract :
The electron-spin magnetic resonance frequency of an electron-spin qubit structure proposed for the realization of a quantum computer is rigorously determined by a numerical method. The potential distribution inside the silicon qubit structure is accurately calculated by an electromagnetic simulation method and the perturbation theory to the second order is formulated to obtain the magnetic resonance frequency of the phosphorus donor electron spin.
Keywords :
elemental semiconductors; numerical analysis; paramagnetic resonance; perturbation theory; phosphorus; quantum computing; silicon; Si:P; electromagnetic field control; electromagnetic simulation; electron spin magnetic resonance frequency; electron-spin qubit structure; numerical method; perturbation theory; phosphorus donor electron spin; potential distribution; silicon qubit structure; solid-state quantum computing; Computers; Logic gates; Magnetic fields; Magnetic resonance; Quantum computing; Silicon; Quantum theory; nuclear magnetic resonance; perturbation methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on
Conference_Location :
Spokane, WA
ISSN :
1522-3965
Print_ISBN :
978-1-4244-9562-7
Type :
conf
DOI :
10.1109/APS.2011.5996607
Filename :
5996607
Link To Document :
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