Asymptotic theory of instabilities in directly modulated semiconductor lasers

Summary form only given. High-speed modulation of laser diodes is important for realizing large-capacity information transmission and ultrafast optical-processing systems. Recently a great deal of interest has been generated by the potential to use lasers running in chaotic regime as the carriers of information in a secure chaotic communication scheme. We have undertaken analytical and numerical calculations in the framework of the single mode rate equation model with the aim to clarify the parameter domains of the basic instabilities involved and relate them to the reported experiments with 1.55 /spl mu/m InGaAs DFB lasers.