Reformation of an SiGe HBT structure for reducing the effect of parasitic barriers

Author

Abiri, Ebrahim ; Salehi, Mohammad Reza ; Shahraki, Mojtaba ; Mehrjoo, Zahra

Author_Institution

Shiraz Univ. of Technol., Shiraz, Iran

Volume

1

fYear

2010

fDate

1-2 Aug. 2010

Firstpage

56

Lastpage

59

Abstract

In this paper, an n-p-n SiGe heterojunction bipolar transistor (HBT) is investigated. The emitter and collector of this transistor are made up of silicon, and germanium dopant is linearly diffused in the base region. Adding germanium dopant causes the formation of parasitic barriers in base-emitter junction of transistor. The barrier effects are reduced by this structure. In this model, choosing the proper dopant structure, the collector current density can be increased.

Keywords

Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor materials; HBT structure reformation; SiGe; base-emitter junction; collector current density; dopant structure; n-p-n heterojunction bipolar transistor; parasitic barrier effect; transistor collector; transistor emitter; Artificial neural networks; Germanium; Heterojuncton; Parasitic barriers; Stepped structure; Trapezoidal structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits,Communications and System (PACCS), 2010 Second Pacific-Asia Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-7969-6

Type

conf

DOI

10.1109/PACCS.2010.5627013

Filename

5627013