DocumentCode :
2936489
Title :
High Density Static RAM for In-Situ Bulk Data Storage
Author :
Mellinger, Ed
Author_Institution :
Woods Hole Oceanographic Institution, Woods Hole, MA, USA
fYear :
1986
fDate :
23-25 Sept. 1986
Firstpage :
444
Lastpage :
447
Abstract :
Static CMOS Random Access Memory (RAM) can be packaged to achieve a density of 1 MByte per running inch of 6" I.D. pressure case, using 64 kbit memory devices. A bulk data storage subsystem using this technique, including 1 MByte/sec CPU interface, backup power system, and memory array of up to 16 MBytes, was constructed and tested in an operational microstructure profiler. Results are discussed, and the general advantages and disadvantages of this data storage method are considered.
Keywords :
Decoding; Electronics packaging; Energy consumption; Logic devices; Manufacturing; Pins; Power dissipation; Printed circuits; Random access memory; Read-write memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OCEANS '86
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/OCEANS.1986.1160459
Filename :
1160459
Link To Document :
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