DocumentCode :
293667
Title :
RF-wafer scale integration: a new approach to active phased arrays
Author :
Whicker, Lawrence R. ; Murphy, James D. ; Halladay, Ralph
Author_Institution :
Westinghouse ESG, Baltimore, MD, USA
Volume :
1
fYear :
1993
fDate :
1993
Firstpage :
42370
Abstract :
Active phased array antennas utilize individually packaged transmit/receive modules, which provide both transmitter and receiver functions on λ2 wavelength centers. Such modules usually contain 5 to 7 individual GaAs circuits which provide the following functions: transmit amplifier, phase shifter, variable attenuator, T/R switch, and low noise amplifier. The authors describe ongoing efforts in which many T/R modules are fabricated simultaneously on a single 3-inch GaAs-wafer. Redundancy in circuit elements is utilized to obtain high yield. The resulting wafer of GaAs T/R cells is utilized as a layer within a more complex package that includes the individual radiating element. Efforts to date have focused on technology for 2-20 GHz and upon extending the technology to higher frequencies
Keywords :
active antenna arrays; adaptive antenna arrays; antenna phased arrays; microstrip antenna arrays; modules; redundancy; wafer-scale integration; 2 to 20 GHz; GaAs circuits; RF-wafer scale integration; SHF; T/R modules; T/R switch; active phased arrays; low noise amplifier; phase shifter; transmit amplifier; transmit/receive modules; variable attenuator; Antenna arrays; Circuits; Gallium arsenide; Low-noise amplifiers; Packaging; Phased arrays; Receiving antennas; Switches; Transmitters; Transmitting antennas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 1993. APMC '93., 1993 Asia-Pacific
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-1352-6
Type :
conf
DOI :
10.1109/APMC.1993.468478
Filename :
468478
Link To Document :
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