Title :
Spectroscopic measurement of mounting-induced strain in optoelectronic devices
Author :
Bärwolff, A. ; Tomm, J.W. ; Müller, R. ; Weiß, S. ; Hutter, M. ; Reichl, H.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Mounting-induced strain in high-power laser diodes is studied by noninvasive photocurrent (PC) spectroscopy. We demonstrate that the strain can be determined with high accuracy by means of Fourier-transform (FT) photocurrent measurements. The optical transitions within the quantum well (QW) region of identical InAlGaAs/GaAs laser diodes which were mounted with different external strain have shown spectral shifts of up to 10 meV. The accuracy of the energy level shifts obtained by FT PC measurements is 150 μeV for the QW-region and 500 μeV for the waveguide region. The measured strain status of the active region is compared with model calculations to quantify the amount of strain which is transferred from the heat sink to the active region of the semiconductor device
Keywords :
Fourier transform spectroscopy; III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; indium compounds; photoconductivity; quantum well lasers; semiconductor device packaging; Fourier-transform photocurrent measurements; III-V semiconductors; InAlGaAs-GaAs; energy level shifts; heat sink; high-power laser diodes; mounting-induced strain; noninvasive photocurrent; optical transitions; optoelectronic devices; quantum well region; spectral shifts; spectroscopic measurement; strain status; waveguide region; Capacitive sensors; Diode lasers; Energy measurement; Energy states; Gallium arsenide; Optical waveguides; Photoconductivity; Semiconductor waveguides; Spectroscopy; Strain measurement;
Conference_Titel :
Electronic Components and Technology Conference, 1999. 1999 Proceedings. 49th
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5231-9
DOI :
10.1109/ECTC.1999.776294
