DocumentCode :
2937011
Title :
Room temperature spin gratings in InGnAsP multiple quantum wells
Author :
Marshall, D. ; Mazilu, Michael ; Miller, Alice ; Button, C.
Author_Institution :
Sch. of Phys. & Astron., Univ. of St. Andrew, UK
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. We have performed amplitude and spin gratings on room temperature InGaAsP multiple quantum wells at 1.52 /spl mu/m. We present our results for the spin grating using a mathematical model taking into account the spin relaxation and electron diffusion. Polarization gratings are produced when two pulses with crossed linear polarization intersect. A periodic modulation of the electric field polarization and circular polarization occurs across the excitation region. Resonance with the heavy hole exciton creates an electron spin grating because of the interband selection rules. This will decay with a rate determined by a combination of the spin relaxation rate and the diffusion of the carriers within the quantum wells.
Keywords :
III-V semiconductors; diffraction gratings; excitons; gallium arsenide; indium compounds; semiconductor quantum wells; spin; 1.52 mum; InGaAsP; InGnAsP multiple quantum wells; amplitude gratings; circular polarization; crossed linear polarization intersect; electric field polarization; electron diffusion; electron spin grating; excitation region; mathematical model; periodic modulation; polarization gratings; quantum wells; room temperature InGaAsP multiple quantum well; room temperature spin gratings; selection rules; spin grating; spin relaxation; spin relaxation rate; Absorption; Delay effects; Excitons; Gratings; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2000. Conference Digest. 2000 International
Conference_Location :
Nice, France
Print_ISBN :
0-7803-6318-3
Type :
conf
DOI :
10.1109/IQEC.2000.907872
Filename :
907872
Link To Document :
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