Title :
Full-Duplex Receiver And PA Integration With BAW Devices
Author :
Bar, P. ; Giry, A. ; Triolet, P. ; Parat, G. ; Pache, D. ; Ancey, P. ; Carpentier, J.F.
Author_Institution :
Dept. of C2S2, UMR-CNRS 6172, Limoges
Abstract :
To go further into integration and to understand parasitic coupling mechanisms in RF integrated circuits, this article describes an RF front-end direct conversion receiver co-integrated with a differential power amplifier (PA). It uses dedicated filtering functions based on bulk acoustic wave (BAW) technology. This circuit performs a prototype of complete transceiver which has been designed to address WCDMA FDD standard. It is realized in a 0.25 mum BiCMOS technology from STMicroelectronics using SiGe-C heterojunction bipolar transistors (HBT) and NLDEMOS transistors. BAW inter-stage filter and reject-cell are designed to improve isolation between transmission and reception bands by reducing coupling mechanisms between transmitter (TX) PA and receiver (RX) path. This circuit has been assembled and tested, RX chain gain is measured to be equal to 24 dB and it has more than 40 dB TX leakage attenuation at intermediate frequency (D7) mixer output under a 2.7 V voltage supply. Differential PA with BAW reject filter delivers up to 28 dBm linear output power.
Keywords :
BiCMOS integrated circuits; bulk acoustic wave devices; code division multiple access; differential amplifiers; heterojunction bipolar transistors; power amplifiers; radiofrequency integrated circuits; transceivers; BiCMOS; NLDEMOS transistors; RF front-end direct conversion receiver; RF integrated circuits; SiGeC; WCDMA FDD standard; bulk acoustic wave technology; dedicated filtering functions; differential power amplifier; full-duplex receiver; heterojunction bipolar transistors; interstage filter; parasitic coupling mechanisms; reception bands; reject-cell; size 0.25 mum; transmission bands; transmitter; voltage 2.7 V; Bulk acoustic wave devices; Circuit testing; Coupling circuits; Differential amplifiers; Filters; Heterojunction bipolar transistors; Isolation technology; Power amplifiers; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.9