• DocumentCode
    2937519
  • Title

    A 9.2 mW, 4-8 GHz Resistive Feedback CMOS LNA with 24.4 dB Gain, 2 dB Noise Figure, and 21.5 dBm Output IP3

  • Author

    Perumana, Bevin G. ; Zhan, Jing-Hong C. ; Taylor, Stewart S. ; Carlton, Brent R. ; Laskar, Joy

  • Author_Institution
    Intel Corp., Hillsboro, OR
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    A 9.2 mW resistive feedback CMOS low-noise amplifier with a 3-dB bandwidth of 3.94 GHz (4.04 -7.98 GHz) is presented. At 5.5 GHz, the fully integrated LNA achieves a measured gain above 24 dB, a noise figure of 2 dB, and an output IP3 of 21.5 dBm. The LNA draws 7.7 mA from the 1.2 V supply and utilizes a single compact low-Q on-chip inductor. The LNA is implemented in a 90-nm CMOS process and occupies a die area of only 0.022 mm2.
  • Keywords
    CMOS integrated circuits; feedback; low noise amplifiers; CMOS low noise amplifier; feedback amplifiers; resistive feedback; Bandwidth; Capacitors; Circuit noise; Gain; Inductors; Low-noise amplifiers; Narrowband; Noise figure; Output feedback; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.15
  • Filename
    4446249