Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs

Author

Li, Hui ; Qin, Guoxuan ; Ma, Zhenqiang ; Ma, Pingxi ; Racanelli, Marco

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

70

Lastpage

73

Abstract

The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBTs by using emitter ballasting scheme than using base ballasting scheme.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; radiofrequency integrated circuits; resistors; RF performance; SiGe; ballast resistor; base ballasting; common-base power HBT; emitter ballasting; Electronic ballasts; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Linearity; Radio frequency; Resistors; Silicon germanium; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.24

Filename

4446258