Title :
High Quality Monolithic 8-Shaped Inductors for Silicon RF IC Design
Author_Institution :
NXP Semicond., Caen
Abstract :
In this paper, RF characterization results of 8-shaped inductors on high resistivity silicon (HRS) substrate are presented. Electrical performances reported to area occupation of 8-shaped inductors are compared to those of classical octagonal/rectangular inductors. It is observed that 8-shaped inductors lead to inductance values 60% higher than what could be expected from classical octagonal/rectangular devices. A predictive electrical model is proposed based on previous investigations. Correlations between measurements and simulation data are found satisfactory.
Keywords :
elemental semiconductors; inductance; inductors; integrated circuit design; monolithic integrated circuits; radiofrequency integrated circuits; silicon; electrical performances; high resistivity silicon substrate; inductance; monolithic 8-shaped inductors; predictive electrical model; silicon RF IC design; Coupling circuits; Inductors; MMICs; Monolithic integrated circuits; Predictive models; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Topology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.30
