Title :
Current-induced magnetization switching with applying magnetic field to hard axis in MgO-based magnetic tunnel junctions
Author :
Inokuchi, T. ; Sugiyama, H. ; Saito, Y. ; Inomata, K.
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
In this study, we investigated the detailed hard axis magnetic field (Hhard) dependence of critical current density (Jc) in MgO-based magnetic tunnel junctions with a bottom-pinned structure, and found that applying Hhard reduces Jc significantly, to 106 A/cm2.
Keywords :
boron alloys; cobalt alloys; critical currents; iridium alloys; iron alloys; magnesium compounds; magnetic field effects; magnetic multilayers; magnetic switching; magnetic tunnelling; magnetisation; manganese alloys; ruthenium; sputter deposition; tantalum; CIMS; DC four-point probe method; IrMn-CoFe; MTJ; MgO-CoFeB-Ta; MgO-based magnetic tunnel junctions; Si; Ta-Ru; UHV magnetron sputtering; applied magnetic fields; bottom-pinned structure; critical current density; current-induced magnetization switching; hard axis of free layer; short current pulses; temperature 293 K to 298 K; thermally oxidized Si wafers; time 1 mus to 10 ms; Computer integrated manufacturing; Energy barrier; Magnetic anisotropy; Magnetic fields; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Pulse measurements;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375849
