Current-induced magnetization switching with applying magnetic field to hard axis in MgO-based magnetic tunnel junctions

Author

Inokuchi, T. ; Sugiyama, H. ; Saito, Y. ; Inomata, K.

Author_Institution

Toshiba Corp., Kawasaki

fYear

2006

fDate

8-12 May 2006

Firstpage

267

Lastpage

267

Abstract

In this study, we investigated the detailed hard axis magnetic field (H_hard) dependence of critical current density (J_c) in MgO-based magnetic tunnel junctions with a bottom-pinned structure, and found that applying H_hard reduces J_c significantly, to 10⁶ A/cm².

Keywords

boron alloys; cobalt alloys; critical currents; iridium alloys; iron alloys; magnesium compounds; magnetic field effects; magnetic multilayers; magnetic switching; magnetic tunnelling; magnetisation; manganese alloys; ruthenium; sputter deposition; tantalum; CIMS; DC four-point probe method; IrMn-CoFe; MTJ; MgO-CoFeB-Ta; MgO-based magnetic tunnel junctions; Si; Ta-Ru; UHV magnetron sputtering; applied magnetic fields; bottom-pinned structure; critical current density; current-induced magnetization switching; hard axis of free layer; short current pulses; temperature 293 K to 298 K; thermally oxidized Si wafers; time 1 mus to 10 ms; Computer integrated manufacturing; Energy barrier; Magnetic anisotropy; Magnetic fields; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375849

Filename

4261700