Title :
Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET
Author :
Kaamouchi, M. El ; Dambrine, G. ; Moussa, M. Si ; Emam, M. ; Vanhoenacker-Janvier, D. ; Raskin, J.P.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (VBS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200degC were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (VTH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (VGS,ZTC9m) or the drain-current ZTC point (VGS,ZTC1DS) opening important opportunities in RF circuits design for nigh temperature applications.
Keywords :
MOSFET; silicon-on-insulator; SOI MOSFET; body-source forward bias control; drain current; temperature 25 degC to 200 degC; threshold voltage; transconductance; zero-temperature-coefficient; CMOS process; CMOS technology; Current measurement; Leakage current; MOS devices; MOSFET circuits; Temperature distribution; Temperature sensors; Threshold voltage; Transconductance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.35
